3818 00 00 10

Code

3818 00 00 10

Type

10-digit tariff line

Duty rate

Free (set at subheading 38180000)

Unit

kg

Classification rulings (U.S. Customs, CROSS)

• 957293 · 1995-02-01 — Carbon Doped Gallium Arsenide Wafers

  This is in reference to your inquiry regarding the subject wafers on behalf of Marubeni America, Inc. FACTS: The subject merchandise consists of highly-resistive carbon- doped gallium arsenide (GaAs) wafers. The wafers are produced from compound crystal ingots grown by the Liquid Encapsulated Czochralski (LEC) method. The carbon doping concentration is controlled by degassing impurities present in the raw material (including contaminated carbon), and then introducing controlled carbon concentration through the addition of purified carbon monoxide gas (CO), as the crystal is pulled. The…

• 953265 · 1993-05-14 — Protest No. 3196-91-100019; Showa Denko America; GAP-EPI-R Type Unmounted Light Emitting Diode Chips; LED; Wafer; Chip; Chemical Element Doped For Use In Electronics; 3818.00.00; 8541.40.20; 8541.40.60

  This is our response to Protest Number 3196-91-100019, dated September 27, 1991, and Application for Further Review, regarding the classification of "GAP-EPI-R Type Unmounted LED Chips," under the Harmonized Tariff Schedule of the United States (HTSUS). The subject merchandise was entered on February 21, 1991, and the entry was liquidated on August 16, 1991. The protest was timely filed on September 27, 1991. FACTS: The "GAP-EPI-R Type Unmounted LED Chips" ("wafers") are described as gallium phosphate wafers and dice that are imported in "material" form to be used exclusively in the…

• 3818 00 00 20 — Polycrystalline silicon wafers, doped
• 3818 00 00 30 — Silicon carbide wafers, doped
• 3818 00 00 40 — Monocrystalline silicon wafers, doped: — Round (circular) shaped, as described in statistical note 2 to this chapter
• 3818 00 00 45 — Monocrystalline silicon wafers, doped: — Pseudo-square or rectangular in shape, as described in statistical note 3 to this chapter
• 3818 00 00 50 — Monocrystalline silicon wafers, doped: — Other
• 3818 00 00 91 — Other

• 3818 — ТН ВЭД ЕАЭС: Элементы химические легированные, предназначенные для использования в электронике, в форме дисков, пластин или в аналогичных формах; соединения химические…
• 3818 — EU CN/TARIC: Chemical elements doped for use in electronics, in the form of discs, wafers or similar forms; chemical compounds doped for use in electronics

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