85423200

Code

85423200

Type

heading / subheading

Duty rate

Free

Tariff lines inside

9

Units of quantity

No. (9)

• 8542 32 00 02 — Dynamic read-write random access (DRAM): — Not over 128 megabits
• 8542 32 00 24 — Dynamic read-write random access (DRAM): — Over 128 megabits but not over 256 megabits
• 8542 32 00 28 — Dynamic read-write random access (DRAM): — Over 256 megabits but not over 512 megabits
• 8542 32 00 32 — Dynamic read-write random access (DRAM): — Over 512 megabits but not over 1 gigabit
• 8542 32 00 36 — Dynamic read-write random access (DRAM): — Over 1 gigabit
• 8542 32 00 41 — Static read-write random access (SRAM)
• 8542 32 00 51 — Electrically erasable programmable read-only memory (EEPROM)
• 8542 32 00 61 — Erasable (except electrically) programmable read-only memory (EPROM)
• 8542 32 00 71 — Other

• 854232 — ТН ВЭД ЕАЭС: запоминающие устройства
• 854232 — EU CN/TARIC: Electronic integrated circuits — Memories

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