Machines and apparatus for the manufacture of boules or wafers
N240976 · 2013-05-16 — The tariff classification of an IonScan Basic System from Germany
The IonScan Basic System is an ion beam-trimming tool for the precise thinning of semiconductor wafer material. The system provides a single high vacuum module with a focused, high-energy (-2000 eV) argon beam to physically sputter material from a wafer’s surface. Material is removed from the wafer’s surface, under computer control, in order to reach a desired thickness with minimum thickness variation across the entire wafer. The thickness of the wafer controls the performance of the electronic component and reduction in thickness variation increases yield. The IonScan Basic System contains…
N061759 · 2009-05-26 — The tariff classification of a crystal grower and a wire saw from an unknown country. Correction to Ruling Number NY N057062
This replaces Ruling Number NY N057062, dated May 7, 2009, which contained a mistake of fact. In NY N057062, the crystal grower and the wire saw were said to be from Japan and Switzerland. In your letter dated May 14, 2009, you indicate that it is unknown as to where the machines will be produced at this time. A complete corrected ruling follows. In your letter dated April 7, 2009 on behalf of Sanyo Solar of Oregon LLC, you requested a tariff classification ruling. The crystal grower, Model FT-CZ2008, is designed to produce monocrystalline semiconductor boules from which semiconductor wafers…
N057062 · 2009-05-06 — The tariff classification of a crystal grower and a wire saw from Japan and Switzerland
The crystal grower, Model FT-CZ2008, is designed to produce monocrystalline semiconductor boules from which semiconductor wafers can be sliced. The unit employs the Czochralski (CZ) method in which a seed crystal, mounted on a rod, is dipped into a crucible of molten material (polycrystalline silicon). The seed crystal is positioned to touch the surface of the molten material. The seed crystal used will have the same crystal orientation as that required in the finished crystal. As the rod is subsequently pulled upward, crystal growth begins as a thin film of the molten material adheres to the…
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